Invention Grant
- Patent Title: Voltage sensing mechanism to minimize short-to-ground current for low drop-out and bypass mode regulators
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Application No.: US15867335Application Date: 2018-01-10
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Publication No.: US10761549B2Publication Date: 2020-09-01
- Inventor: Subhasis Sasmal , Jebas Paul Daniel T , Naveen Cannankurichi , Bernard Drexler
- Applicant: Microsemi Corporation
- Applicant Address: US AZ Chandler
- Assignee: Microsemi Corporation
- Current Assignee: Microsemi Corporation
- Current Assignee Address: US AZ Chandler
- Agency: Glass and Associates
- Agent Kenneth Glass
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2c77cdac
- Main IPC: G05F1/569
- IPC: G05F1/569 ; G05F1/575 ; H02M3/156 ; G05F3/24 ; G05F1/445

Abstract:
Various electronics systems may benefit from appropriate limitation of short-to-ground current. For example, sensor systems may benefit from a voltage sensing mechanism to minimize short-to-ground current for low drop-out and bypass mode regulators. A system can include a first power transistor configured to operate in a low drop-out mode. The system can also include a short to ground sensor configured to control current to the first power transistor. The short to ground sensor can be configured to limit a maximum short-circuit current below a predefined load current capability.
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Information query
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