Invention Grant
- Patent Title: Ferromagnetic resonance (FMR) electrical testing apparatus for spintronic devices
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Application No.: US15875004Application Date: 2018-01-19
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Publication No.: US10761154B2Publication Date: 2020-09-01
- Inventor: Guenole Jan , Son Le , Luc Thomas , Santiago Serrano
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: G01R33/24
- IPC: G01R33/24 ; G01N24/10 ; G01R33/60 ; G01N24/00

Abstract:
A scanning ferromagnetic resonance (FMR) measurement system is disclosed with a radio frequency (RF) probe and one or two magnetic poles mounted on a holder plate and enable a perpendicular-to-plane or in-plane magnetic field, respectively, at test locations. While the RF probe tip contacts a magnetic film on a whole wafer under test (WUT), a plurality of microwave frequencies (fR) is sequentially transmitted through the probe tip. Simultaneously, a magnetic field (HR) is applied to the contacted region thereby causing a FMR condition in the magnetic film for each pair of (HR, fR) values. RF output signals are transmitted through or reflected from the magnetic film to a RF diode and converted to voltage signals which a controller uses to determine effective anisotropy field, linewidth, damping coefficient, and/or inhomogeneous broadening for a sub-mm area. The WUT is moved to preprogrammed locations to enable multiple FMR measurements at each test location.
Public/Granted literature
- US20190227132A1 Ferromagnetic Resonance (FMR) Electrical Testing Apparatus for Spintronic Devices Public/Granted day:2019-07-25
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