Invention Grant
- Patent Title: Wafer probe card for evaluating micro light emitting diodes, analysis apparatus including the same, and method of fabricating the wafer probe card
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Application No.: US15887551Application Date: 2018-02-02
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Publication No.: US10761146B2Publication Date: 2020-09-01
- Inventor: Jong Hoon Jung , Dae Sik Kim , Sung Yeol Kim , Seung Yong Shin
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7e626372
- Main IPC: G01R31/00
- IPC: G01R31/00 ; G01R31/44 ; G01J1/44 ; G01R1/073 ; G01R31/26 ; G01J3/50 ; G01J1/42

Abstract:
Provided are a wafer probe card that matches in one-to-one correspondence with an LED wafer by implementing a probe system having the same size as the LED wafer, and inspects brightness and wavelength of light emitted from a plurality of LEDs provided on the LED wafer at once by controlling the plurality of LEDs to emit light, an analysis apparatus including the same, and a method of fabricating the wafer probe card.
Public/Granted literature
- US20180340985A1 WAFER PROBE CARD, ANALYSIS APPARATUS INCLUDING THE SAME, AND METHOD OF FABRICATING THE WAFER PROBE CARD Public/Granted day:2018-11-29
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