Invention Grant
- Patent Title: Copper manganese sputtering target
-
Application No.: US16148084Application Date: 2018-10-01
-
Publication No.: US10760156B2Publication Date: 2020-09-01
- Inventor: Stephane Ferrasse , Frank C. Alford , Susan D. Strothers , Ira G. Nolander , Michael R. Pinter , Patrick Underwood
- Applicant: Honeywell International Inc.
- Applicant Address: US NJ Morris Plains
- Assignee: Honeywell International Inc.
- Current Assignee: Honeywell International Inc.
- Current Assignee Address: US NJ Morris Plains
- Agency: Faegre Drinker Biddle & Reath LLP
- Main IPC: C22C9/05
- IPC: C22C9/05 ; C23C14/34

Abstract:
A method of forming a high strength copper alloy. The method comprises heating a copper material including from about 2 wt. % to about 20 wt. % manganese by weight of the copper material to a temperature above 400° C., allowing the copper material to cool to a temperature from about 325° C. to about 350° C. to form a cooled copper material, and extruding the cooled copper material with equal channel angular extrusion to form a cooled copper manganese alloy.
Public/Granted literature
- US20190112702A1 COPPER MANGANESE SPUTTERING TARGET Public/Granted day:2019-04-18
Information query