Invention Grant
- Patent Title: Array of cross point memory cells
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Application No.: US16041374Application Date: 2018-07-20
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Publication No.: US10741755B2Publication Date: 2020-08-11
- Inventor: Scott E. Sills , Durai Vishak Nirmal Ramaswamy , Alessandro Calderoni
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L27/11 ; H01L45/00 ; H01L27/11507
Abstract:
An array of cross point memory cells comprises spaced first lines which cross spaced second lines. Two memory cells are individually between one of two immediately adjacent of the second lines and a same single one of the first lines.
Public/Granted literature
- US20180331283A1 Array Of Cross Point Memory Cells Public/Granted day:2018-11-15
Information query
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