Invention Grant
- Patent Title: Thin film transistor, display including the same, and method of fabricating the same
-
Application No.: US15394229Application Date: 2016-12-29
-
Publication No.: US10741693B2Publication Date: 2020-08-11
- Inventor: Ju-Heyuck Baeck
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Fenwick & West LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@d0d209d
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/385 ; H01L21/44 ; H01L27/12 ; H01L29/267 ; H01L29/66 ; H01L21/02
Abstract:
A thin film transistor includes a gate electrode, an active layer formed of oxide semiconductor material on a substrate, and a gate insulation layer therebetween. The active layer includes a channel region corresponding to the gate electrode, a source region at one side of the channel region, and a drain region at the other side of the channel region. The source region includes a first upper portion and the drain region includes a second upper portion that includes the oxide semiconductor material and Si.
Public/Granted literature
- US20170194502A1 Thin Film Transistor, Display Including the Same, and Method of Fabricating the Same Public/Granted day:2017-07-06
Information query
IPC分类:
