Invention Grant
- Patent Title: Semiconductor device and fabrication method thereof
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Application No.: US16040100Application Date: 2018-07-19
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Publication No.: US10741689B2Publication Date: 2020-08-11
- Inventor: Yong Li
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@67015793
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/04 ; H01L29/10 ; H01L29/66 ; H01L21/762 ; H01L29/06 ; H01L21/768 ; H01L21/84 ; H01L27/088 ; H01L21/8234 ; H01L29/08
Abstract:
A semiconductor device and fabrication method are provided. The method includes: providing a base substrate; forming a first dielectric layer on the base substrate; forming a target gate structure in the first dielectric layer and on the base substrate, where a first groove is formed above the target gate structure and in the first dielectric layer; forming a second groove by etching the first dielectric layer on sidewalls of the first groove to expand an opening of the first groove; forming a protective layer in the second groove; and forming conductive plugs in the first dielectric layer on sides of the target gate structure and the protective layer. The protective layer has a dielectric constant greater than the first dielectric layer.
Public/Granted literature
- US20190027606A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2019-01-24
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