Invention Grant
- Patent Title: Method for manufacturing semiconductor device and semiconductor device
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Application No.: US15070884Application Date: 2016-03-15
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Publication No.: US10741686B2Publication Date: 2020-08-11
- Inventor: Hiroshi Kono , Tomohiro Nitta
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@664ab5d2
- Main IPC: H01L21/38
- IPC: H01L21/38 ; H01L29/78 ; H01L21/04 ; H01L29/66 ; H01L29/04 ; H01L29/06 ; H01L29/16 ; H01L29/167 ; H01L29/10 ; H01L29/739
Abstract:
A method for manufacturing a semiconductor device according to an embodiment includes implanting impurity ions into a SiC layer in a direction of ±1 degrees, ±1 degrees, ±1 degrees, or ±1 degrees.
Public/Granted literature
- US20170077290A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2017-03-16
Information query
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