Invention Grant
- Patent Title: Integrated channel diode
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Application No.: US15283523Application Date: 2016-10-03
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Publication No.: US10741684B2Publication Date: 2020-08-11
- Inventor: Christopher Boguslaw Kocon , Simon John Molloy , John Manning Savidge Neilson , Hideaki Kawahara
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/40 ; H01L29/06 ; H01L29/10 ; H01L29/423 ; H01L29/417 ; H01L29/08 ; H01L29/66
Abstract:
A semiconductor device includes a vertical drift region over a drain contact region, abutted on opposite sides by RESURF trenches. A split gate is disposed over the vertical drift region. A first portion of the split gate is a gate of an MOS transistor and is located over a body of the MOS transistor over a first side of the vertical drift region. A second portion of the split gate is a gate of a channel diode and is located over a body of the channel diode over a second, opposite, side of the vertical drift region. A source electrode is electrically coupled to a source region of the channel diode and a source region of the MOS transistor.
Public/Granted literature
- US20170025525A1 INTEGRATED CHANNEL DIODE Public/Granted day:2017-01-26
Information query
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