- Patent Title: Method of manufacturing a protective stack on a semiconductor fin
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Application No.: US15907214Application Date: 2018-02-27
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Publication No.: US10741667B2Publication Date: 2020-08-11
- Inventor: Yi-Lun Chen , Bau-Ming Wang , Chun-Hsiung Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/306 ; H01L21/02 ; H01L21/8234 ; H01L21/311 ; H01L21/3115 ; H01L21/768 ; H01L29/78
Abstract:
A method includes forming a semiconductor fin over a substrate; forming a helmet stack on a top surface of the semiconductor fin; forming a spacer layer over the helmet stack and on opposite sidewalls of the semiconductor fin; and etching the helmet layer and the spacer layer to expose the top surface and the sidewalls of the semiconductor fin.
Public/Granted literature
- US20190267465A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-08-29
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