Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16141972Application Date: 2018-09-26
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Publication No.: US10741547B2Publication Date: 2020-08-11
- Inventor: Tatsuya Naito
- Applicant: FUJI ELECTRIC CO.,LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@73333b64
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/06 ; H01L29/40 ; H01L29/10 ; H01L29/423 ; H01L29/739 ; H01L29/78 ; H01L29/12 ; H01L29/861 ; H01L29/868 ; H01L29/36 ; H01L27/07
Abstract:
A semiconductor device includes: a first conductivity-type semiconductor substrate; a second conductivity-type base region provided on a front surface side inside the semiconductor substrate, a gate trench portion provided inside the semiconductor substrate and penetrating the base region from a front surface of the semiconductor substrate, the gate trench portion having a gate conductive portion, and a dummy trench portion provided inside the semiconductor substrate and penetrating the base region from a front surface of the semiconductor substrate, the dummy trench portion including an upper dummy conductive portion having an emitter potential and a lower gate conductive portion positioned below the upper dummy conductive portion and having a gate potential, wherein the lower gate conductive portion of the dummy trench portion is connected to the gate conductive portion of the gate trench portion.
Public/Granted literature
- US20190027472A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-01-24
Information query
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