Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16591559Application Date: 2019-10-02
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Publication No.: US10741545B2Publication Date: 2020-08-11
- Inventor: Masaki Tamaru , Kazuma Yoshida , Michiya Otsuji , Tetsuyuki Fukushima
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.
- Current Assignee: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/02 ; H01L23/522 ; H01L27/06 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/417 ; H01L29/423 ; H01L29/866
Abstract:
A semiconductor device includes a first transistor and a second transistor. The first transistor includes a first body layer and a first connection part. The second transistor includes a second body layer and a second connection part. A second impedance, which is, in a path between the second connection part and the second body layer, inclusive, a maximum impedance seen by the first source electrode in the second body layer, is greater than a first impedance, which is, in a path between the first connection part and the first body layer, inclusive, a maximum impedance seen by the first source electrode in the first body layer.
Public/Granted literature
- US20200035669A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-01-30
Information query
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