Invention Grant
- Patent Title: Semiconductor device with integrated capacitor and manufacturing method thereof
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Application No.: US15901342Application Date: 2018-02-21
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Publication No.: US10741488B2Publication Date: 2020-08-11
- Inventor: Chung-Yen Chou
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/768 ; H01L23/528 ; H01L49/02
Abstract:
A semiconductor structure includes a capacitor including a first electrode and a second electrode disposed over and electrically insulated from the first electrode. The semiconductor structure also includes a first conductive via extending through the first electrode and contacting a planar surface of the first electrode. The semiconductor structure further includes a second conductive via extending through the second electrode and contacting a planar surface of the second electrode.
Public/Granted literature
- US20190103352A1 SEMICONDUCTOR DEVICE WITH INTEGRATED CAPACITOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-04-04
Information query
IPC分类:
