Invention Grant
- Patent Title: Method of forming film
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Application No.: US16406059Application Date: 2019-05-08
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Publication No.: US10741444B2Publication Date: 2020-08-11
- Inventor: Hidetami Yaegashi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7e2e1eec
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/027 ; H01L21/285 ; G03F7/20 ; G03F7/16
Abstract:
In a method according to an exemplary embodiment, a substrate is prepared in a chamber. A patterned resist mask has been formed on a first region of the substrate. A surface of the substrate in a second region is exposed. A film is formed on the substrate in the chamber by sputtering. The film is formed on the substrate in a manner that particles emitted obliquely downward from a target are caused to be incident onto the substrate.
Public/Granted literature
- US20190355613A1 METHOD OF FORMING FILM Public/Granted day:2019-11-21
Information query
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