Invention Grant
- Patent Title: Method for producing power semiconductor module arrangement
-
Application No.: US16588535Application Date: 2019-09-30
-
Publication No.: US10741418B2Publication Date: 2020-08-11
- Inventor: Marianna Nomann , Elmar Kuehle
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@38c3983
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/498 ; H01L23/14 ; H01L23/49 ; H01L23/15 ; H01L23/00

Abstract:
A method for producing a power semiconductor module arrangement having a base plate and a contact element configured to, when the base plate is arranged in a housing, provide an electrical connection between an inside and an outside of the housing, includes: connecting an electrically insulating first layer to the base plate; and connecting the contact element to the first layer. Connecting the first layer to the base plate includes forming a third layer on the base plate or on the first layer and mounting the first layer on the base plate such that the third layer attaches the first layer to the base plate. Connecting the contact element to the first layer includes forming a second layer on the first layer or on the contact element and mounting the contact element on the first layer such that the second layer attaches the contact element to the first layer.
Public/Granted literature
- US20200027751A1 Method for Producing Power Semiconductor Module Arrangement Public/Granted day:2020-01-23
Information query
IPC分类: