Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
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Application No.: US16083944Application Date: 2017-01-05
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Publication No.: US10741413B2Publication Date: 2020-08-11
- Inventor: Norihisa Matsumoto
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Xsensus LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@211ab157
- International Application: PCT/JP2017/000085 WO 20170105
- International Announcement: WO2017/195399 WO 20171116
- Main IPC: H01L21/447
- IPC: H01L21/447 ; H01L21/52
Abstract:
When a semiconductor element is bonded to a base plate electrode, a cushioning is used for protecting the surface of the semiconductor element. A protrusion having an outwardly cutting shape is formed around an area on the base plate electrode for bonding the semiconductor element to disperse and reduce shear force acting on the cushioning during the bonding, so that no cushioning adheres to the surface of the semiconductor element after bonding.
Public/Granted literature
- US20200058517A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2020-02-20
Information query
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