Invention Grant
- Patent Title: Gate structure of semiconductor device
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Application No.: US16193433Application Date: 2018-11-16
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Publication No.: US10741412B2Publication Date: 2020-08-11
- Inventor: Tsan-Chun Wang , Chun-Feng Nieh
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/3215 ; H01L29/51 ; H01L29/49 ; H01L29/66 ; C23C14/48 ; H01J37/317 ; H01L21/3115 ; H01L21/02 ; H01L21/28
Abstract:
A semiconductor device and method of manufacture are provided. In some embodiments a divergent ion beam is utilized to implant ions into a capping layer, wherein the capping layer is located over a first metal layer, a dielectric layer, and an interfacial layer over a semiconductor fin. The ions are then driven from the capping layer into one or more of the first metal layer, the dielectric layer, and the interfacial layer.
Public/Granted literature
- US20190088498A1 Semiconductor Device and Method of Manufacture Public/Granted day:2019-03-21
Information query
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