Invention Grant
- Patent Title: Method of growing two-dimensional transition metal dichalcogenide thin film and method of manufacturing device including the same
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Application No.: US16012938Application Date: 2018-06-20
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Publication No.: US10741389B2Publication Date: 2020-08-11
- Inventor: Haeryong Kim , Hyeonjin Shin , Jaeho Lee , Sanghyun Jo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4367682a
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/02 ; H01L29/66 ; H01L29/786 ; H01L29/778 ; H01L29/24
Abstract:
A method of growing a two-dimensional transition metal dichalcogenide (TMD) thin film and a method of manufacturing a device including the two-dimensional TMD thin film are provided. The method of growing the two-dimensional TMD thin film may include a precursor supply operation and an evacuation operation, which are periodically and repeatedly performed in a reaction chamber provided with a substrate for thin film growth. The precursor supply operation may include supplying two or more kinds of precursors of a TMD material to the reaction chamber. The evacuation operation may include evacuating the two or more kinds of precursors and by-products generated therefrom from the reaction chamber.
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