Invention Grant
- Patent Title: Resistive memory device and resistive memory system including a plurality of layers, and method of operating the system
-
Application No.: US16161285Application Date: 2018-10-16
-
Publication No.: US10741245B2Publication Date: 2020-08-11
- Inventor: Eun-chu Oh , Pil-sang Yoon , Jun-jin Kong , Hong-rak Son
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@103ce07c
- Main IPC: G11C13/00
- IPC: G11C13/00 ; H03M13/05 ; H03M13/27 ; G06F12/00 ; G11C8/06 ; G06F11/10 ; G06F12/02
Abstract:
A method of operating a resistive memory system including a plurality of layers may include receiving a write request and first data corresponding to a first address, converting the first address into a second address and assigning n (n is an integer equal to or larger than 2) pieces of sub-region data generated from the first data to the plurality of layers, and writing the n pieces of sub-region data to at least two layers according to the second address.
Public/Granted literature
Information query
