Invention Grant
- Patent Title: Semiconductor apparatus
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Application No.: US15741873Application Date: 2016-01-08
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Publication No.: US10734990B2Publication Date: 2020-08-04
- Inventor: Hideo Komo , Shoji Saito , Takeshi Omaru
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2016/050532 WO 20160108
- International Announcement: WO2017/119126 WO 20170713
- Main IPC: H03K17/082
- IPC: H03K17/082 ; H03K17/14 ; H03K17/567 ; H03K17/08

Abstract:
A current detection circuit (4) detects a device current flowing in the semiconductor device (1). A voltage detection circuit (5) detects a device voltage applied to the semiconductor device (1). A temperature calculation device (6) has a table collecting device temperatures of the semiconductor device (1) respectively corresponding to plural collector currents and plural collector voltages, and reads out a device temperature corresponding to the device current detected by the current detection circuit (4) and the device voltage detected by the voltage detection circuit (5) from the table.
Public/Granted literature
- US20180219543A1 SEMICONDUCTOR APPARATUS Public/Granted day:2018-08-02
Information query
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