Disclosed herein is a semiconductor device including: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first insulating layer disposed on the semiconductor structure; a first electrode disposed on the first conductive semiconductor layer through a first hole of the first insulating layer; a second electrode disposed on the second conductive semiconductor layer through a second hole of the first insulating layer; a first cover electrode disposed on the first electrode; and a second cover electrode disposed on the second electrode, wherein the second cover electrode includes a plurality of pads, and a connecting portion configured to connect the plurality of pads, a width of the connecting portion is smallest at a central position between the adjacent pads, and an area ratio between the second cover electrode and the first cover electrode is in the range of 1:1.1 to 1:1.5.