Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16278880Application Date: 2019-02-19
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Publication No.: US10734483B2Publication Date: 2020-08-04
- Inventor: Makoto Mizukami , Masaru Furukawa , Teruyuki Ohashi
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: White & Case LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@31b93ea2
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/16 ; H01L29/10 ; H01L29/08 ; H01L29/66 ; H01L29/04 ; H01L29/78 ; H01L29/51
Abstract:
A semiconductor device according to an embodiment includes a silicon carbide layer having first and second planes; a first silicon carbide region; second and third silicon carbide regions between the first silicon carbide region and the first plane; a fourth silicon carbide region between the second silicon carbide region and the first plane; a first and second gate electrodes; a suicide layer on the fourth silicon carbide region; a first electrode on the first plane having a first portion and a second portion, the first portion being in contact with the first silicon carbide region, the second portion being in contact with the suicide layer; a second electrode on the second plane; and an insulating layer between the first portion and the second portion having a first side surface and a second side surface, an angle of the first side surface being smaller than that of the second side surface.
Public/Granted literature
- US20200091296A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-03-19
Information query
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