Invention Grant
- Patent Title: Dual manetoresistance element with two directions of response to external magnetic fields
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Application No.: US16507538Application Date: 2019-07-10
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Publication No.: US10734443B2Publication Date: 2020-08-04
- Inventor: Rémy Lassalle-Balier , Paolo Campiglio
- Applicant: Allegro MicroSystems, LLC
- Applicant Address: US NH Manchester
- Assignee: Allegro MicroSystems, LLC
- Current Assignee: Allegro MicroSystems, LLC
- Current Assignee Address: US NH Manchester
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/02 ; G01R33/09 ; H01L43/10 ; H01L43/08
Abstract:
A material stack includes a first magnetoresistance element with a first direction of response to an external magnetic field and a second magnetoresistance element with second direction of response to the external magnetic field, opposite to the first direction of response. The first magnetoresistance element can be disposed under or over the second magnetoresistance element. An insulating layer separates the first and second magnetoresistance elements.
Public/Granted literature
- US20200066790A1 DUAL MAGNETORESISTANCE ELEMENT WITH TWO DIRECTIONS OF RESPONSE TO EXTERNAL MAGNETIC FIELDS Public/Granted day:2020-02-27
Information query
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