Invention Grant
- Patent Title: Methods of making semiconductor devices
-
Application No.: US16396235Application Date: 2019-04-26
-
Publication No.: US10734370B2Publication Date: 2020-08-04
- Inventor: Zhaohui Ma , Wei Zhou , Chee Chung So , Soo Loo Ang , Aibin Yu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L25/18 ; H01L25/065 ; H01L25/00 ; H01L23/00 ; H01L23/31 ; H01L23/544 ; H01L21/683 ; H01L21/78

Abstract:
Methods of making semiconductor device packages may involve cutting kerfs in streets between regions of a semiconductor wafer and positioning stacks of semiconductor dice on portions of surfaces of at least some adjacent regions. A protective material may be dispensed only between the stacks of the semiconductor dice, over the exposed remainders of the regions, and in the kerfs. A back side of the semiconductor wafer may be ground to a final thickness, revealing the protective material in the kerfs at a side of the semiconductor wafer opposite the stacks of the semiconductor dice. The protective material between the stacks of the semiconductor dice and within the kerfs may be cut through, leaving the protective material on sides of the semiconductor dice of the stacks and on side surfaces of the regions within the kerfs.
Public/Granted literature
- US20190252362A1 METHODS OF MAKING SEMICONDUCTOR DEVICES Public/Granted day:2019-08-15
Information query
IPC分类: