A method for manufacturing a silicon epitaxial wafer includes: preparing a test silicon wafer in advance, forming the multilayer film on a surface of the test silicon wafer, and measuring a warp direction and a warp amount (Warp) W of the silicon wafer having the multilayer film formed thereon; and selecting a silicon wafer as a device formation substrate and conditions for forming an epitaxial layer which is formed on the silicon wafer as the device formation substrate in such a manner that a warp which cancels out the measured warp amount W is formed in a direction opposite to the measured warp direction, and forming the epitaxial layer on a surface of the selected silicon wafer as the device formation substrate where the multilayer film is formed under the selected conditions for forming the epitaxial layer.