A method for implementing pulse-amplitude modulation on a memory device includes configuring a first resistor of a first memory die to a first resistance value. The method also includes configuring a second resistor of a second memory die to a second resistance value. The method also includes receiving, during performance of a read operation, in parallel: two voltage values from the first memory die; and two voltage values from the second memory die. The method also includes determining a first data bit value using the two voltage values from the first memory die. The method also includes determining a second data bit value using the two voltage values from the second memory die.