Invention Grant
- Patent Title: Apparatuses and methods for providing word line voltages
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Application No.: US16405075Application Date: 2019-05-07
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Publication No.: US10734050B2Publication Date: 2020-08-04
- Inventor: Tae H. Kim
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C8/08
- IPC: G11C8/08 ; G11C8/10 ; G11C8/14

Abstract:
Methods and apparatuses of providing word line voltages are disclosed. An example method includes: activating and deactivating a word line. Activating the word line includes: rendering the first, second and third transistors conductive, non-conductive and non-conductive, respectively, wherein the first transistor is rendered conductive by supplying a gate of the first transistor with a first voltage; and supplying the first node with an active voltage. Deactivating the word line includes: changing a voltage of the first node from the active voltage to an inactive voltage; changing a voltage of the gate of the first transistor from the first voltage to a second voltage, wherein the first transistor is kept conductive by the second voltage; rendering the third transistor conductive during the gate of the first transistor being at the second voltage; and rendering the first and second transistors non-conductive and conductive, respectively, after the third transistor has been rendered conductive.
Public/Granted literature
- US20190259434A1 APPARATUSES AND METHODS FOR PROVIDING WORD LINE VOLTAGES Public/Granted day:2019-08-22
Information query