Invention Grant
- Patent Title: Vacuum arc deposition apparatus and deposition method
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Application No.: US15807027Application Date: 2017-11-08
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Publication No.: US10731245B2Publication Date: 2020-08-04
- Inventor: Hiroshi Yakushiji , Yuto Watanabe , Masahiro Shibamoto , Yuzuru Miura
- Applicant: CANON ANELVA CORPORATION
- Applicant Address: JP Kawasaki-shi, Kanagawa-ken
- Assignee: Canon Anelva Corporation
- Current Assignee: Canon Anelva Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa-ken
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1c5e944e
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C23C14/32 ; C23C14/06 ; G11B5/84 ; C23C14/56 ; H01J37/32

Abstract:
A vacuum arc deposition apparatus for forming a ta-C film on a substrate using arc discharge includes a holding unit that holds a target unit, an anode unit into which electrons emitted from the target unit flow, and a power supply that supplies, between the target unit and the anode unit, a current for generating a plasma by arc discharge. The current supplied by the power supply at the time of the arc discharge is generated by superimposing, on a DC current, a pulse current of a pulse frequency not higher than 140 Hz.
Public/Granted literature
- US20180066353A1 VACUUM ARC DEPOSITION APPARATUS AND DEPOSITION METHOD Public/Granted day:2018-03-08
Information query
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