Invention Grant
- Patent Title: Perovskite quantum dot material
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Application No.: US16824631Application Date: 2020-03-19
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Publication No.: US10731075B2Publication Date: 2020-08-04
- Inventor: Haizheng Zhong , Feng Zhang , Xiangang Wu , Hailong Huang , Yuwei Niu
- Applicant: SHENZHEN TCL NEW TECHNOLOGY CO., LTD
- Applicant Address: CN Shenzhen
- Assignee: SHENZHEN TCL NEW TECHNOLOGY CO., LTD
- Current Assignee: SHENZHEN TCL NEW TECHNOLOGY CO., LTD
- Current Assignee Address: CN Shenzhen
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@415e0081
- Main IPC: C09K11/06
- IPC: C09K11/06 ; C09K11/66 ; C09K11/61 ; C09K11/87 ; C09K11/02 ; C09K11/75 ; B01D17/04 ; B01J13/08 ; H01L51/00 ; H01L51/50 ; H01L51/52 ; H01L33/50

Abstract:
Provided is a hybridized perovskite quantum dot material. The quantum dot material includes a kernel and surface ligands. The kernel is formed by R1NH3AB3 or (R2NH3)2AB4, where R1 is methyl group, R2 is an organic molecular group, A is at least one selected from Ge, Sn, Pb, Sb, Bi, Cu and Mn, B is at least one selected from Cl, Br and I, A and B form a coordination octahedral structure, and R1NH3 or R2NH3 is filled in gaps of the coordination octahedral structure. The surface ligand is an organic acid or organic amine. The quantum dot material has a high fluorescence quantum yield.
Public/Granted literature
- US20200216754A1 PEROVSKITE QUANTUM DOT MATERIAL Public/Granted day:2020-07-09
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