- Patent Title: Method of forming pattern for a large area liquid crystal device
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Application No.: US16349254Application Date: 2017-11-10
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Publication No.: US10730147B2Publication Date: 2020-08-04
- Inventor: Jeong Ho Park , Jin Soo Lee , Bu Gon Shin
- Applicant: LG CHEM, LTD.
- Applicant Address: KR Seoul
- Assignee: LG CHEM, LTD.
- Current Assignee: LG CHEM, LTD.
- Current Assignee Address: KR Seoul
- Agency: Dentons US LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2a33baba
- International Application: PCT/KR2017/012753 WO 20171110
- International Announcement: WO2018/088853 WO 20180517
- Main IPC: B23K26/57
- IPC: B23K26/57 ; B32B9/00 ; B32B27/06 ; B32B38/10 ; B32B43/00 ; G02F1/1333 ; G02F1/1337 ; G02F1/1339 ; B32B27/32 ; H01B5/14 ; B32B27/36 ; G02F1/1343 ; B23K26/351 ; B32B27/28 ; B23K26/364 ; B23K26/36 ; B23K26/362 ; B23K26/359 ; B23K26/352 ; B23K26/356 ; B23K26/55 ; B23K26/0622
Abstract:
The present invention relates to a pattern forming method of a liquid crystal device.
Public/Granted literature
- US20190271868A1 A METHOD OF FORMING PATTERN FOR A LARGE AREA LIQUID CRYSTAL DEVICE Public/Granted day:2019-09-05
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