Invention Grant
- Patent Title: Semiconductor apparatus including a power gating circuit
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Application No.: US16503101Application Date: 2019-07-03
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Publication No.: US10707861B2Publication Date: 2020-07-07
- Inventor: Woongrae Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@555dad68
- Main IPC: H03K17/14
- IPC: H03K17/14 ; H03K5/14 ; H03K19/00 ; H03K5/00

Abstract:
A semiconductor apparatus may include a logic circuit and a power gating circuit including a gating transistor configured to apply a first supply voltage to the logic circuit based on an operation mode of the semiconductor apparatus. The semiconductor apparatus may be configured to monitor a characteristic of the logic circuit and adjust aback bias voltage to the gating transistor based on the characteristic of the logic circuit.
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