Invention Grant
- Patent Title: Semiconductor device capable of reducing a temperature difference among semiconductor chips
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Application No.: US16513495Application Date: 2019-07-16
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Publication No.: US10707860B1Publication Date: 2020-07-07
- Inventor: Satoshi Miyahara
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@18f09276
- Main IPC: H03K17/00
- IPC: H03K17/00 ; H03K17/56 ; H03K17/62 ; H03K17/14 ; H03K17/567 ; H03K17/60 ; H03K17/76

Abstract:
A semiconductor device including a first semiconductor chip, a second semiconductor chip, the junction temperature of which becomes higher than that of the first semiconductor chip during switching of the semiconductor device, a collector pattern electrically connected to a collector of the first semiconductor chip and a collector of the second semiconductor chip, an emitter pattern electrically connected to an emitter of the first semiconductor chip and an emitter of the second semiconductor chip, a gate pattern electrically connected to a gate of the first semiconductor chip, a first diode having an anode electrically connected to the gate pattern and a cathode electrically connected to a gate of the second semiconductor chip and a second diode connected in reverse parallel with the first diode.
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