Invention Grant
- Patent Title: Semiconductor light-emitting element
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Application No.: US15277518Application Date: 2016-09-27
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Publication No.: US10707392B2Publication Date: 2020-07-07
- Inventor: Hideki Tsujiai
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@41163b4c
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L33/24 ; H01L33/38

Abstract:
A semiconductor light-emitting element according to the present invention includes a metal layer, a light-emitting layer, a first conductivity type layer and a second conductivity type layer sandwiching the light-emitting layer, and a plurality of contact portions that electrically connects the metal layer and the first conductivity type layer. The semiconductor light-emitting element includesa surface electrode including a pad electrode and a branch-shaped electrode that extends from the pad electrode between the plurality of contact portions. Distances between the contact portions and the surface electrode satisfies the following relational expression: d1>d2>d3, wherein d1 represents a distance between a first contact portion in the periphery of the pad electrode among the contact portions and the pad electrode; d2 represents a distance between the first contact portion and the branch-shaped electrode closest to the first contact portion; and d3 represents a distance between a second contact portion spaced further away from the pad electrode than the first contact portion among the contact portions and the branch-shaped electrode closest to the second contact portion.
Public/Granted literature
- US20170092828A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT Public/Granted day:2017-03-30
Information query
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