Invention Grant
- Patent Title: Contact for silicon heterojunction solar cells
-
Application No.: US16217533Application Date: 2018-12-12
-
Publication No.: US10707367B2Publication Date: 2020-07-07
- Inventor: Bahman Hekmatshoar-Tabari , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Erik Johnson
- Main IPC: H01L31/0747
- IPC: H01L31/0747 ; H01L31/05 ; H01L31/0352 ; B82Y20/00 ; H01L31/0224

Abstract:
A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate. The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact. An emitter contact is coupled to the emitter side structure on a light collecting end portion of the device. A back contact is coupled to the back side structure opposite the light collecting end portion.
Public/Granted literature
- US20190123230A1 CONTACT FOR SILICON HETEROJUNCTION SOLAR CELLS Public/Granted day:2019-04-25
Information query
IPC分类: