Invention Grant
- Patent Title: Thin film transistor, method for fabricating the same, display substrate and display device
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Application No.: US15765473Application Date: 2017-07-13
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Publication No.: US10707353B2Publication Date: 2020-07-07
- Inventor: Wei Qin
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Womble Bond Dickinson (US) LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@77e30b2a
- International Application: PCT/CN2017/092748 WO 20170713
- International Announcement: WO2018/032918 WO 20180222
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L29/417 ; H01L29/66 ; H01L29/423

Abstract:
A TFT, a method for fabricating the same, a display substrate, and a display device are disclosed. The TFT comprises a substrate, a gate, a gate insulating layer, semiconductor layer, a source, and a drain. The gate comprises a rough surface on a side facing the semiconductor layer. Since the surface of gate is uneven, the light which has been reflected on the surface of gate will no longer be reflected, or will be directly scattered to other directions. The incident light from the backlight source cannot impinge onto the semiconductor layer by continuous reflection. This reduces the possibility that the semiconductor layer is irradiated by light, and improves stability of TFT.
Public/Granted literature
- US20180308980A1 THIN FILM TRANSISTOR, METHOD FOR FABRICATING THE SAME, DISPLAY SUBSTRATE AND DISPLAY DEVICE Public/Granted day:2018-10-25
Information query
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