A semiconductor device includes: a plurality of semiconductor switching elements that are a plurality of MOSFETs each including a Schottky barrier diode; a first ohmic electrode disposed above a first region of a well region and electrically connected to the first region, the first region being on the opposite side from a predefined region; a first Schottky electrode disposed on a semiconductor layer exposed at the first region of the well region; and a line electrically connected to the first ohmic electrode, the first Schottky electrode, and a source electrode. The device enables reduction of a breakdown in a gate insulating film.