Invention Grant
- Patent Title: Semiconductor device including a barrier diode
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Application No.: US16106335Application Date: 2018-08-21
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Publication No.: US10707317B2Publication Date: 2020-07-07
- Inventor: Tatsuya Shiraishi
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Applicant Address: JP Minato-ku JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee Address: JP Minato-ku JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@d4567fb
- Main IPC: H01L29/732
- IPC: H01L29/732 ; H01L29/47 ; H01L29/66 ; H01L29/10 ; H01L29/872 ; H01L29/06
Abstract:
According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a first electrode, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a second electrode, and a third electrode. The first semiconductor region includes a first region and a second region. The second semiconductor region is provided on the second region. The third semiconductor region is provided on a portion of the second semiconductor region. The third electrode is provided on the second semiconductor region and the first semiconductor region. A first layer is provided on the third electrode. The first layer includes at least one selected from the group consisting of titanium, nickel, and vanadium. A second layer is provided on the first layer. The second layer includes silicon and at least one selected from the group consisting of nitrogen and oxygen.
Public/Granted literature
- US20190288086A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-09-19
Information query
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