To provide a new GaN laminate obtained b growing a GaN layer on a GaN substrate by HVPE, including: a GaN substrate containing GaN single crystal and having a low index crystal plane as c-plane closest to a main surface; and a GaN layer epitaxially grown on the main surface of the GaN substrate wherein a surface of the GaN layer has a macro step-macro terrace structure in which a macro step and a macro terrace are alternately arranged, one of the macro step and the macro terrace has a step-terrace structure in which a step having a height of equal to or more than a plurality of molecular layers of GaN and extending in a direction orthogonal to m-axis direction, and a terrace are alternately arranged, and the other one of the macro step and the macro terrace has a step-terrace structure in which a step having a height of equal to or more than a plurality of molecular layers of GaN and extending in a direction orthogonal to a-axis direction, and a terrace are alternately arranged.