Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16219886Application Date: 2018-12-13
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Publication No.: US10707200B2Publication Date: 2020-07-07
- Inventor: Kenji Sasaki , Takayuki Tsutsui , Isao Obu , Yasuhisa Yamamoto
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto-fu
- Agency: Studebaker & Brackett PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@482f94ec com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@64c801be
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H03F3/213 ; H01L23/00 ; H01L29/423 ; H01L29/08 ; H01L29/10 ; H01L29/417 ; H03F1/52 ; H03F3/195 ; H01L29/861 ; H01L29/06 ; H01L29/737
Abstract:
An amplifier circuit including a semiconductor element is formed on a substrate. A protection circuit formed on the substrate includes a plurality of protection diodes that are connected in series with each other, and the protection circuit is connected to an output terminal of the amplifier circuit. A pad conductive layer at least partially includes a pad for connecting to a circuit outside the substrate. The pad conductive layer and the protection circuit at least partially overlap each other in plan view.
Public/Granted literature
- US20190115338A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-04-18
Information query
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