Invention Grant
- Patent Title: Plasma processing apparatus
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Application No.: US16752376Application Date: 2020-01-24
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Publication No.: US10707054B1Publication Date: 2020-07-07
- Inventor: Shinji Kubota
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7c32d6d4 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1e6e70b7
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H05H1/46

Abstract:
In a plasma processing apparatus of an exemplary embodiment, a radio frequency power source generates radio frequency power for plasma generation. A bias power source periodically applies a pulsed negative direct-current voltage to a lower electrode to draw ions into a substrate support. The radio frequency power source supplies the radio frequency power as one or more pulses in a period in which the pulsed negative direct-current voltage is not applied to the lower electrode. The radio frequency power source stops supply of the radio frequency power in a period in which the pulsed negative direct-current voltage is applied to the lower electrode. Each of the one or more pulses has a power level that gradually increases from a point in time of start thereof to a point in time when a peak thereof appears.
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