Invention Grant
- Patent Title: Polycrystalline dielectric thin film and capacitor element
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Application No.: US16069095Application Date: 2017-02-01
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Publication No.: US10707018B2Publication Date: 2020-07-07
- Inventor: Kumiko Yamazaki , Hiroshi Chihara , Yuki Nagamine , Junichi Yamazaki , Yuji Umeda
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@23389096
- International Application: PCT/JP2017/003579 WO 20170201
- International Announcement: WO2017/135296 WO 20170810
- Main IPC: H01G4/08
- IPC: H01G4/08 ; H01G4/33 ; C23C14/00 ; C23C14/06 ; H01B3/00 ; C01B21/082 ; C30B29/10 ; C23C16/30
Abstract:
A polycrystalline dielectric thin film and a capacitor element have a large relative dielectric constant. The polycrystalline dielectric thin film has a perovskite oxynitride as a principal component. The perovskite oxynitride is represented by compositional formula Aa1Bb1OoNn (a1+b1+o+n=5), and the a-axis length of the crystal lattice of the perovskite oxynitride is larger than a theoretical value.
Public/Granted literature
- US20190019622A1 POLYCRYSTALLINE DIELECTRIC THIN FILM AND CAPACITOR ELEMENT Public/Granted day:2019-01-17
Information query
