Invention Grant
- Patent Title: Serdes with jitter injection self stress mechanism
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Application No.: US16011206Application Date: 2018-06-18
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Publication No.: US10693589B2Publication Date: 2020-06-23
- Inventor: Ehud Nir , Henry Wong , Petar Ivanov Krotnev
- Applicant: Ehud Nir , Henry Wong , Petar Ivanov Krotnev
- Applicant Address: CN Shenzhen
- Assignee: HUAWEI TECHNOLOGIES CO., LTD.
- Current Assignee: HUAWEI TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Shenzhen
- Main IPC: H04L1/00
- IPC: H04L1/00 ; H04L12/26

Abstract:
Devices and methods are provided for performing a high-frequency jitter self stress check on a receiver to assist with optimization. High-frequency jitter is injected into a clock signal recovered from a received data signal and used to sample the data signal. The injected jitter increases the bit error rate (BER), making BER a more useful and quicker optimization metric in applications using low-noise communication links. Error correction is used to maintain acceptable output BER while the self stress check is in progress.
Public/Granted literature
- US20190386773A1 SERDES WITH JITTER INJECTION SELF STRESS MECHANISM Public/Granted day:2019-12-19
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