Invention Grant
- Patent Title: Through backplane laser irradiation for die transfer
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Application No.: US16252044Application Date: 2019-01-18
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Publication No.: US10693051B2Publication Date: 2020-06-23
- Inventor: Sharon N. Farrens , Anusha Pokhriyal
- Applicant: GLO AB
- Applicant Address: SE Lund
- Assignee: GLO AB
- Current Assignee: GLO AB
- Current Assignee Address: SE Lund
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L25/075 ; H01L33/00 ; H01L27/15 ; H01L33/06 ; H01L33/30

Abstract:
Light emitting devices can be disposed on the front side of a transparent backplane. A laser beam can be irradiated through the transparent backplane and onto a component located on the front side of the transparent backplane. In one embodiment, the component may be a solder material portion that is reflowed to bond the light emitting devices to the transparent backplane. In another embodiment, the component may be a solder material bonded to a defective bonded light emitting device. In this case, the laser irradiation can reflow the solder material to dissociate the defective bonded light emitting device from the transparent backplane. In yet another embodiment, the component may be a device component that is electrically modified by the laser irradiation.
Public/Granted literature
- US20190157533A1 THROUGH BACKPLANE LASER IRRADIATION FOR DIE TRANSFER Public/Granted day:2019-05-23
Information query
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