Invention Grant
- Patent Title: GaN-on-Si switch devices
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Application No.: US15422254Application Date: 2017-02-01
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Publication No.: US10692976B2Publication Date: 2020-06-23
- Inventor: Jenn Hwa Huang , Weixiao Huang
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Agent Bruce M. Green
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/10 ; H01L29/20 ; H01L29/812 ; H01L21/265 ; H01L21/266 ; H01L21/306 ; H01L21/308 ; H01L23/29 ; H01L23/31 ; H01L29/51
Abstract:
A low leakage current switch device (110) is provided which includes a GaN-on-Si substrate (11, 13) with one or more device mesas (41) in which isolation regions (92, 93) are formed using an implant mask (81) to implant ions (91) into an upper portion of the mesa sidewalls and the peripheral region around each elevated surface of the mesa structures exposed by the implant mask, thereby preventing the subsequently formed gate electrode (111) from contacting the peripheral edge and sidewalls of the mesa structures.
Public/Granted literature
- US20170141190A1 GAN-ON-SI SWITCH DEVICES Public/Granted day:2017-05-18
Information query
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