Invention Grant
- Patent Title: Semiconductor device and method of operation for low and high threshold voltage transistors
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Application No.: US16162631Application Date: 2018-10-17
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Publication No.: US10692972B2Publication Date: 2020-06-23
- Inventor: Adam Richard Brown , Jim Brett Parkin , Phil Rutter , Steven Waterhouse , Saurabh Pandey
- Applicant: NEXPERIA B.V.
- Applicant Address: NL Nijmegen
- Assignee: Nexperia B.V.
- Current Assignee: Nexperia B.V.
- Current Assignee Address: NL Nijmegen
- Agency: Ohlandt, Greeley, Ruggiero & Perle, L.I.P.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H03K17/687 ; H01L29/423 ; H01L27/07 ; H03K17/30 ; H03K17/16 ; H03K17/081 ; H03K17/08

Abstract:
A field effect transistor semiconductor device having a compact device footprint for use in automotive and hot swap applications. The device includes a plurality of field effect transistor cells with the plurality of transistor cells having at least one low threshold voltage transistor cell and at least one high threshold voltage transistor cell arranged on a substrate. The field effect transistor semiconductor device is configured and arranged to operate the at least one high threshold voltage transistor cell during linear mode operation, and operate both the low threshold voltage transistor cell and the high threshold voltage transistor cell during resistive mode operation. Further provided is a method of operating field effect transistor semiconductor device including a plurality of field effect transistor cells that includes at least one low threshold voltage transistor cell and at least one high threshold voltage transistor cell.
Public/Granted literature
- US20200066840A9 SEMICONDUCTOR DEVICE AND METHOD OF OPERATION Public/Granted day:2020-02-27
Information query
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