Invention Grant
- Patent Title: Process for fabricating silicon nanostructures
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Application No.: US16054457Application Date: 2018-08-03
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Publication No.: US10692971B2Publication Date: 2020-06-23
- Inventor: Brent A. Buchine , Marcie R. Black , Faris Modawar
- Applicant: Advanced Silicon Group, Inc.
- Applicant Address: US MA Lincoln
- Assignee: Advanced Silicon Group, Inc.
- Current Assignee: Advanced Silicon Group, Inc.
- Current Assignee Address: US MA Lincoln
- Agency: Lando & Anastasi, LLP
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L29/06 ; B01J20/10 ; B01J20/28 ; B82Y20/00 ; B82Y30/00 ; H01L21/308 ; H01L31/0236 ; H01M4/134 ; H01M4/36 ; H01M4/38 ; H01L29/16 ; C23C14/34 ; H01L21/02 ; H01L21/285 ; H01L21/3213 ; H01L29/04 ; H01L31/028 ; H01L31/0352 ; H01M4/04 ; H01M4/1395 ; H01M4/66 ; H01M10/0525 ; H01M4/02
Abstract:
A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.
Public/Granted literature
- US20180350908A1 PROCESS FOR FABRICATING SILICON NANOSTRUCTURES Public/Granted day:2018-12-06
Information query
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