Invention Grant
- Patent Title: Methods for solving epitaxial growth loading effect at different pattern density regions
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Application No.: US16046824Application Date: 2018-07-26
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Publication No.: US10692882B2Publication Date: 2020-06-23
- Inventor: Zhen Fang , Haihui Huang , Er Jiang Xu , Meng Wang
- Applicant: Yangtze Memory Technologies Co., Ltd.
- Applicant Address: CN Wuhan, Hubei
- Assignee: Yangtze Memory Technologies Co., Ltd.
- Current Assignee: Yangtze Memory Technologies Co., Ltd.
- Current Assignee Address: CN Wuhan, Hubei
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L21/02 ; H01L21/027 ; H01L21/033 ; H01L21/3105 ; H01L21/311 ; H01L27/11556
Abstract:
The present disclosure describes methods and patterned devices for reducing a loading effect between a low pattern density region and a high pattern density region. The patterned device includes a substrate, a first insulating layer over the substrate, a low pattern density region, a high pattern density region, a second insulating layer, and an epitaxial grown layer. The low pattern density region includes a first trench in the first insulating layer and the substrate. The high pattern density region includes a second trench in the first insulating layer and the substrate. The second insulating layer is formed in the first trench. The epitaxial grown layer is formed in the second trench. The first trench has a larger cross-sectional area than the second trench.
Public/Granted literature
- US20190355739A1 METHODS FOR SOLVING EPITAXIAL GROWTH LOADING EFFECT AT DIFFERENT PATTERN DENSITY REGIONS Public/Granted day:2019-11-21
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