Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US16275260Application Date: 2019-02-13
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Publication No.: US10692876B2Publication Date: 2020-06-23
- Inventor: Takamasa Okawa
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@76cc433a
- Main IPC: H01L27/11565
- IPC: H01L27/11565 ; H01L27/11582 ; H01L21/28 ; H01L27/11521 ; H01L27/115
Abstract:
A semiconductor device includes a first film that includes first electrode layers separated from each other in a first direction and extending in second and third directions, first columnar portions in the first film, that include a charge storage layer and a first semiconductor layer, and extend in the first direction, a second film on the first film and including second electrode layers separated from each other in the first direction and extending in second and third directions, second columnar portions in the second film and on the first columnar portions, that include a second semiconductor layer and extend in the first direction, and first insulating films separated from the second columnar portions in the third direction in the second film and extending in first and second directions. The first columnar portions form a square or rectangular lattice pattern below the first insulating films and a triangular lattice pattern elsewhere.
Public/Granted literature
- US20200083241A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-03-12
Information query
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