Invention Grant
- Patent Title: Method and device for electrical overstress and electrostatic discharge protection
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Application No.: US15925569Application Date: 2018-03-19
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Publication No.: US10692854B2Publication Date: 2020-06-23
- Inventor: David J. Rose , William A. Russell , Jonathan Clark
- Applicant: Semtech Corporation
- Applicant Address: US CA Camarillo
- Assignee: Semtech Corporation
- Current Assignee: Semtech Corporation
- Current Assignee Address: US CA Camarillo
- Agency: Patent Law Group: Atkins and Associates, P.C.
- Agent Brian M. Kaufman; Robert D. Atkins
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H02H9/04 ; H01L29/861 ; H01C7/12 ; H01L23/62 ; H02H9/02
Abstract:
A semiconductor device is protected from electrical overstress (EOS) and electro-static discharge (ESD) events by a series protection circuit electrically coupled in series along the transmission line between a signal source and a load. The series protection circuit includes a first field-effect transistor (FET) electrically coupled in series between the signal source and load. A parallel protection circuit is electrically coupled between the transmission line and a ground node. The parallel protection circuit can include a transient-voltage-suppression (TVS) diode.
Public/Granted literature
- US20180286854A1 Method and Device for Electrical Overstress and Electrostatic Discharge Protection Public/Granted day:2018-10-04
Information query
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