Invention Grant
- Patent Title: Fin critical dimension loading optimization
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Application No.: US15799611Application Date: 2017-10-31
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Publication No.: US10692769B2Publication Date: 2020-06-23
- Inventor: Chia Ming Liang , Yi-Shien Mor , Huai-Hsien Chiu , Chi-Hsin Chang , Jin-Aun Ng , Yi-Juei Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/088 ; H01L29/10 ; H01L29/66 ; H01L21/308 ; H01L29/78

Abstract:
Integrated circuit devices having optimized fin critical dimension loading are disclosed herein. An exemplary integrated circuit device includes a core region that includes a first multi-fin structure and an input/output region that includes a second multi-fin structure. The first multi-fin structure has a first width and the second multi-fin structure has a second width. The first width is greater than the second width. In some implementations, the first multi-fin structure has a first fin spacing and the second multi-fin structure has a second fin spacing. The first fin spacing is less than the second fin spacing. In some implementations, a first adjacent fin pitch of the first multi-fin structure is greater than or equal to three times a minimum fin pitch and a second adjacent fin pitch of the second multi-fin structure is less than or equal to two times the minimum fin pitch.
Public/Granted literature
- US10651090B2 Fin critical dimension loading optimization Public/Granted day:2020-05-12
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